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TetraFET
D1021UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A K
B (2 pls) E
C 1
2
3
D 5 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W - 28V - 400MHz PUSH-PULL
FEATURES
* SIMPLIFIED AMPLIFIER DESIGN
G (4 pls)
F
H
J
I
M
N
* SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE
DK
PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.45 1.65R 45 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 5 0.76 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.02 0.13 Inches 0.254 0.065R 45 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 Tol. 0.005 0.005 5 0.03 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.001 0.005 PIN 4 DRAIN 1 GATE 2
* HIGH GAIN - 13 dB MINIMUM
APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Power Dissipation Drain - Source Breakdown Voltage * Gate - Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 350W 70V 20V 20A -65 to 150C 200C
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00
D1021UK
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE
BVDSS IDSS IGSS gfs GPS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 125W VDS = 28V f = 400MHz IDQ = 1.6A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 4A 1 3.2 13 50 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 70
Typ.
Max. Unit
V 4 1 7 mA
mA
V S dB % --
VGS(th) Gate Threshold Voltage *
TOTAL DEVICE
h
VSWR Load Mismatch Tolerance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
PER SIDE
VDS = 28V VDS = 28V VDS = 28V 240 120 10 pF pF pF
* Pulse Test:
Pulse Duration = 300 ms , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj-case Thermal Resistance Junction - Case Max. 0.5C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00
D1021UK

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Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00
D1021UK

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Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

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Prelim. 11/00
D1021UK
15
+28V G a te -B ia s
100K 6x4mm c o n ta c t pad D 1021U K 6x4mm c o n ta c t p a d 1 .5 K 100uF 100nF
L2
680pF
L1
22K 620pF T1 2 -1 8 p F 1 -3 .5 p F T3
6" T2 10pF 27pF 2 -1 8 p F 6# T6 620pF 2 -1 8 p F 620pF
620pF
6x4mm c o n ta c t pad
6 x 4m m c o n ta c t p a d D 1021U K
400MHz Test Fixture
T1 T2,3,4,5 T6 L1 L2 11cm 50 Ohm UT47 semi-rigid coax on Siemens B62152A1X1 2 hole ferrite core 9cm 15 Ohm UT85-15 semi-rigid coax 9.7cm 50 Ohm UT85 semi-rigid coax 7 Turns 19swg enamelled copper wire 3.5mm internal diameter 5.5 Turns 19swg enamelled copper wire on Fair-rite FT50 ferrite core
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00

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